Conference Publications
1. AdityaSankar Medury,
Navakanta Bhat and K.N.Bhat, “A Compact Model incorporating Quantum
Effects for Ultra-Thin-Body Double-Gate MOSFETs" International
Nanoelectronics Conference (INEC), Jan 2010
2. Sindhuja Sridharan, Navakanta Bhat,, K.N. Bhat,
"pSi-ZnO solar cells fabricated by sol gel method" XV International
Workshop on the Physics of Semiconductor Devices(IWPSD), Dec 2009
3. Ajayan K.R., Navakanta Bhat, “Impact of Annealing
Temperature on Device Variability” IWPSD, XV International Workshop on the
Physics of Semiconductor Devices(IWPSD), Dec 2009
4. AdityaSankar Medury, Navakanta Bhat and K.N.Bhat
"Ultra-Thin-Body Symmetric Double-Gate MOSFETs: A Perturbation Based
Device Model Incorporating Quantization Effects", XV International
Workshop on the Physics of Semiconductor Devices(IWPSD), Dec 2009
5. K. Majumdar, M. Kota,
Navakanta Bhat and Y.M. Lin "Self-Consistent Electronic Structure
of Graphene Nanoribbon Devices," XV International Workshop on the Physics
of Semiconductor Devices(IWPSD), Dec 2009
6. K. Majumdar and Navakanta Bhat "Effect of Volume
Inversion in Ultra-Thin-Body Double Gate FET," XV International Workshop
on the Physics of Semiconductor Devices(IWPSD), Dec 2009
7. B.P. Harish, Navakanta Bhat, and Mahesh B. Patil,
“Bridging Technology-CAD and Design-CAD for Variability Aware Nano-CMOS
Circuits”, IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-5
Pages: 2309-2312, 2009
8. AdityaSankar Medury, Navakanta Bhat and K.N.Bhat
"Modeling theThreshold Voltage of Ultra-Thin-Body(UTB) Long Channel
Symmetric Double-Gate (DG) MOSFETs" International Semiconductor Device
Research Symposium(ISDRS), Dec 2009
9. S.Khan, Thejas, G.K.Ananthasuresh and Navakant Bhat,
“"Design and Characterization of a Micro machined Accelerometer with
Mechanical Amplifier for Intrusion Detection", Proc. of ISSS 2009,
National Conference on Smart Materials Structures and Systems, 2009
10.Ajayan
K.R., Navakant Bhat “Impact of Process
Variability on 28nm Analog CMOS” 13th
IEEE/VSI VLSI Design and Test Symposium July 2009
11.N.
Bhat, B. Jayaraman, R. Pratap, S. Bagga, S. Mohan, “Integrated CMOS Gas Sensor
System”, Invited talk at the International conference on Electron Devices and
Semiconductor Technology (IEDST), 2009
12.C.
Malhi, R. Pratap, N. Bhat, "High Sensitivity FET Integrated MEMS
Deflection Sensor", IEEE Sensors 2009
13.C. Malhi, R. Pratap and N. Bhat, “Design of a High
Sensitivity FET Integrated Microphone", Eurosensors September 2009,
Procedia Chemistry, Vol. 1, pp.875-878, 2009
14.G.C. Deepak and Navakanta Bhat, “RF Sputtered Er2O3
Thin Films as High Gate Dielectrics for Germanium MOS Devices, ECS
Transactions, 19 (1) , 215th ECS Meeting, San, May 2009
15.V.
T. Arun, K. N Bhat and Navakanta Bhat, “Effect of annealing temperature on
electrical characteristics of Pt-Ge Schottky junctions”, International Workshop
on the Physics of Semiconductor Devices (IWPSD), 2009.
16.Malhi Charanjeet Kaur, Rudra Pratap and Navakanta
Bhat, “MOSFET based MEMS Microphone with Wide Frequency Band”, International
Conference on MEMS (ICMEMS 2009), IIT Madras, January 3-5, 2009.
17.Thejas, Navakanta Bhat, Rudra Pratap, “High Accuracy
Angular RateSensing using GyroFET”, Proc. of ICMEMS 2009, Intl. Conference on
MicroElectroMechanical Systems, 2009.
18.C. Venkatesh, N. Bhat, “Design and Characterisation of
High Dynamic range Torsional Varactor”, Invited talk at the International
Conference on MEMS (ICMEMS), 2009
19.A.V.S.S. Prasad, N. Bhat, “Test Structure
Characterization and Fault Modeling of SOI MUMPS Process”, International
Conference on MEMS (ICMEMS), 2009
20.S. Ananad, N. Bhat, K. N. Bhat, S. Mohan, “A Surface
Modification Process for Lift-off Applications using Direct Write Laser
Lithography”, International Conference on MEMS (ICMEMS), 2009
21.Jairam S, Kusum Lata, Subir Roy and Navakanta Bhat, “Formal Verification of a
MEMS based adaptive cruise control system”, Modeling and Simulation of
Microsystems, NSTI Nanotech, pp.611-614,
2008
22.Jairam S, Navakanta Bhat, “GyroCompiler:A Soft IP
Model Analysis and Synthesis framework for design of MEMS based Gyroscope”,
International Conference on VLSI Design 2008.
23.Kusum Lata, Jairam Sukumar, Subir Roy , Jamadagni H S,
Navakanta Bhat, “Case Studies Towards a Platform Independent Framework for
Formal Verification of Hybrid Systems”, VDAT 2008.
24.Jairam S, Kusum Lata, Subir Roy and Navakanta Bhat,
Verification of a MEMS Based Adaptive Cruise Control using Simulation and
Semi-Formal Approaches”, International Conference on Electronic Circuits and
Systems (ICECS) 2008.
25.S.A. Kannan, Satyam Dwivedi, Manodipan Sahoo Bharadwaj
Amrutur and Navakanta Bhat, “Optimal power and noise allocation for analog and
digital sections of a low power radio receiver”, IEEE ISLPED 2008.
26.Vedavathi
S., Jayashree K. P., K. Navakanta Bhat, K N
Bhat, S. Mohan, “Studies on KOH anisotropic etching for MEMS
applications”, Proceedings of International Conference on Emerging
Microelectronics and Interconnection Technology (EMIT-08), December 15-18,
2008.
27.Siva Rama Krishna Vanjari, Navakanta Bhat, Bharadwaj
Amrutur and Sampath Srinivasan, "Micromachined electrochemical cell
platform for biosensors," International Conference on Smart Materials,
Structures and Systems (ISSS), 2008
28.Santosh
Hegde, Thejas and Navakanta Bhat, "Universal capacitance sensor,"
International Conference on Smart Materials, Structures and Systems (ISSS),
2008.
29.Balaji
Jayaraman, Navakanta Bhat and Rudra Pratap, "Thermal analysis of
microheaters using mechanical dynamic response," International Conference
on Smart Materials, Structures and Systems (ISSS), 2008.
30.Rakesh
Gnana David J and Navakanta Bhat, "A low power, process invariant keeper
design for high speed dynamic logic circuits", ISCAS 2008.
31.Sen,
Srimoyee; Roy, Urmimala; Kshirsagar, Chaitanya; Bhat, Navakanta; Sarkar,
Chandan Kumar, “Circuit prospects of DGFET: Variable gain differential
amplifier an a schmitt trigger with adjustable hysteresis”, Very Large Scale
Integration, 2007. VLSI - SoC 2007. IFIP International Conference on, Volume ,
Issue , 15-17 Oct. 2007 Page(s):280 - 283
32.N.
Bhat and C. Venkatesh, “Impact of Beam Dimensions on Torsional Varactor”,
Invited paper at International Conference on Advanced Materials (ICAM), IUMRS
2007
33.P.R.Kumar,
34.Harish,
BP, Bhat, Navakanta and Patil, Mahesh B, "Process Variation Aware
Estimation of Static Leakage Power in Nano-CMOS", SISPAD 2007.
35.
36.Harish,
BP and Bhat, Navakanta and Patil, Mahesh B, " CV based Analytical Modeling
of Dynamic Power for 65-nm CMOS Library Characterization", IEEE VLSI
Design and Test Symposium 2007.
37.Harish,
BP and Bhat, Navakanta and Patil, Mahesh B, "Process Variability-Aware
Statistical Hybrid Modeling of Dynamic Power Dissipation in 65 nm CMOS
Designs", International Conference on Computing: Theory and Applications,
2007.
38.G.C.
39.
40.Balaji
Jayaraman and Navakanta Bhat, “High precision 16-bit readout gas sensor
interface in 0.13ěm CMOS,” International Symposium on Circuits and Systems, pp.
3071 – 3074, May 2007
41.K.
42.S.
Jayaram and N. Bhat, “Integrated Stability Analysis Methods for Hybrid
Systems”, IEEE VLSI Design and Test Symposium, 2006
43.S.
Bagga, N. Bhat and S. Mohan, “Gas Sensor Interface ASIC on 0.7mm CMOS Technology”, IEEE VLSI Design and Test Symposium, 2006
44.K.
45.Balaji
Jayaraman and Navakanta Bhat, “System Level Modeling and Simulation of a Gas
Sensor Interface”, IMAPS India National Conference, 2006
46.B.P.
Harish and Navakanta Bhat, “Resistive Modeling of Estimation of Static Leakage
Power in Nanoscale CMOS”, IMAPS India National Conference, 2006
47.S.Bagga,
S.Mohan and N.Bhat," Effect of the Sensor Film Thickness on the
Sensitivity of the Tin Oxide based LPG Gas Sensor" in proceedings of the
Conference on Smart Structures and MEMS System for Aerospace Applications,
December 1-2,2006, Hyderabad, India.
48.S.Bagga,
S.Mohan and N.Bhat," Influence of Substrate Temperature on the Optical and
Structure Properties of Tin Oxide Films" in National Symposium on
Instrumentation, October 12-15, 2006, Gwalior, India.
49.Balaji
Jayaraman and Navakanta Bhat, “A Temperature Independent Current Source on
0.13µm CMOS Technology”, International Conference on Computers and Devices for
Communication (CODEC), 2006
50.K.
Jayant, Hithesh Gatty and Navakanta Bhat, “A novel low actuation Voltage switch
using the concept of displacement amplification”, Indo-Chinese Workshop on
MEMS, 2006
51.C.
Kshirasagar, A. Madan, N.Bhat, “Device Performance Variations in 20nm Trigate
FinFET”, International Workshop on Physics of Semiconductor Devices, December
2005
52.C.
Venkatesh, K.J.Vinoy and N. Bhat, “Application of Torsional Varactor in the
design of phase shifters” International Conference on MEMS and Semiconductor
Nanotechnology, IIT Kharagpur, December 2005
53.N.
Bhat, S. Rajesh, S. Syamala, “ASIC Interface design for MEMS Gyroscope Sensor”,
Invited paper at the National Symposium on Instrumentation, CUSAT, Cochin,
November 2005
54.C.
Venkatesh, and N. Bhat, “Issues in design of torsional MEMS varactor”, Invited
paper at ISSS Conference, Bangalore, July 2005.
55.S.
Rajesh, S. Syamala, N. Bhat, “Novel Test Structure to Emulate Capacitance
Variations of a Rate-Grade Gyroscope”. Asian Solid State Circuits Conference,
Taiwan, November 2005
56.N.
Bhat, “SOC Technology : CMOS and Beyond”, Invited tutorial at the Asia South
Pacific International Conference on Embedded Systems”, July 2005
57.B.P.
Harish, Navakanta Bhat, and Mahesh B. Patil, “Modeling of the effects of
process variations on circuit delay at 65nm”, IEEE CONFERENCE ON ELECTRON
DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS pp. 761-764 ,
2005
58.R.
Srinivasan and N. Bhat, “Impact of channel engineering on unity gain frequency
and noise figure in 90nm NMOS transistor for RF application”, 18th International VLSI Design Conference,
Calcutta , January 2005.
59.R.
Srinivasan and N. Bhat, “Impact of Gate-Drain/Source Overlap on Noise Figure in
90nm NMOS Transistor for RF Applications”, International Symposium on
Microwaves, 2004
60.B.P.Harish, N. Bhat, “Characterization of 65nm CMOS NAND gate
delay sensitivity on gate length and implant dose variations”, IINC 2004
61.J.P.Kulkarni,
N.Bhat, “Process technique for improving the tuning range in MOS varactor”,
Proceedings of the IEEE INDICON, pp. 534-537, 2004.
62.J.P.Kulkarni,
N.Bhat, “Improving Tuning Range in Varactors using Poly-Silicon depletion
Effect”, Asia Pacific Microwave Conference, New Delhi, 2004.
63.C.
Venkatesh and N. Bhat, “A MEMS Oscillator based on Displacement Sensing
Principle”, 8th IEEE VLSI
Design and Test Workshops 2004
64.B.P.Harish,
R.Srinivasan and N. Bhat, “Process Sensitivity Evaluation of 90nm CMOS
Technology with Gate to Source/Drain Overlap Length as a Device Design
Parameter”, 8th IEEE VLSI
Design and Test Workshops 2004
65.R.
Sangati, S. Syamala and N. Bhat, “Capacitance Sensing Techniques for MEMS
Gyroscope”, 8th IEEE VLSI
Design and Test Workshops 2004
66.R.
Srinivasan and N. Bhat, “Reassessment of Channel Engineering in sub-100nm
MOSFETs”, 8th IEEE VLSI Design
and Test Workshops 2004
67.H
C Srinivasaiah and N. Bhat, “Response
Surface Modeling of 100nm CMOS Process Technology Using Design of
Experiment”", 17th International
VLSI Design Conference, 2004, Bombay
68.S
Jairam, N. Bhat, S. S. Bisht, R. Pratap,
“A Quasi Static Model for a Simply Supported Beam in a Circuit Simulation
Framework”, 17th International VLSI
Design Conference, 2004, Bombay
69.M.
P.Singh, C.S.Thakur, K.Shalini, T. Shripathi, N. Bhat and S.A.Shivashankar, “ A Comparative Study of Erbium Oxide
and Gadolinium Oxide High-K Dielectric Thin Films Grown by Low Pressure
Metalorganic Chemical Vapour Deposition (MOCVD) Using b-Diketonates as Precursors”, 204th
Meeting of Electrochemical Society, USA, 2004
70.M.P.Singh,
G.C.
71.N.
Bhat and S. Pamidighantam, “MEMS and
Applications”, Tutorial at IEEE TENCON
2003, October 2003, Bangalore
72.G.C.Deepak,
M.S.Dharmapraksh, N. Bhat and
S.A.Shivashankar, “Electrical Characterization of MOCVD grown HfO2
Thin Films for Gate Dielectric Applications”, 12th International Workshop on Physics of Semiconductor
Devices, Chennai, pp. 456-458, 2003
73.A.
K. Pugalia, J.P. Kulkarni, N. Bhargava and N. Bhat, “Single Pocket Halo
Sensitivity in 100nm Ananlog Transistor Design”, 12th International Workshop on Physics of Semiconductor
Devices, Chennai, pp. 603-605, 2003
74.A.
Kumar, R. Pratap and N. Bhat, “Modeling and Simulation of Thermalization
Profile of Sputtered Atoms in a Glow Discharge Cell”, 12th International Workshop on Physics of Semiconductor
Devices, Chennai, pp. 564-566, 2003
75.N. Bhat, C. Venkatesh and S. Pati, “Micro
Electro Mechanical Systems (MEMS): An Overview”, Tutorial at 7th IEEE VLSI Design and Test
Workshops 2003, Bangalore
76.A.
K. Gupta and N. Bhat, “A Low Power
Circuit to Generate Neuron Activation Function and its Derivative using Back
Gate Effect”, 7th IEEE VLSI
Design and Test Workshops 2003, Bangalore
77.S.
Deb and N. Bhat, “Design and
Implementation of Passive RF Tag IC”, 7th
IEEE VLSI Design and Test Workshops 2003, Bangalore
78.C.S.Thakur
and N. Bhat, “Impact of Gate to
Source/Drain Overlap for Analog CMOS Circuit Application in sub-100nm
Technology”, 7th IEEE VLSI
Design and Test Workshops 2003, Bangalore
79.R
Srinivasan and N. Bhat, “Effect of
Scaling on the Non-Quasi-Static Behaviour of the MOSFET for RF IC's, 16th International VLSI Design
Conference 2003, New Delhi
80.M.P.
Singh, C.S. Thakur, K. Shalini, N. Bhat
and S.A. Shivashankar, “Characterization of a Potential Gate Dielectric: MOCVD
Grown Erbium Oxide on Silicon”, Electro Chemical Society Conference, Paris, 2003
81.S.
Pati, C. Venkatesh, N. Bhat and R.
Pratap, “Voltage Controlled Oscillator Using Tunable MEMS Resonator”, 2nd International Conference on
Materials for Advanced Technologies, Singapore 2003
82.C.
Venkatesh, S. Pati and N. Bhat,
“Torsional MEMS Varactor with Low Actuation Voltage” 2nd International Conference on Materials for Advanced
Technologies, Singapore 2003
83.M.
P. Singh, C. S. Thakur, N. Bhat, and
S. A. Shivashankar, “A study of Al2O3:C films on Si(100)
grown by low pressure MOCVD”, Material
Research Society fall Meeting USA 2003
84.H.
C Srinivasaiah and N. Bhat, “Implant
dose sensitivity of 0.1mm CMOS inverter delay", 7th ASPDAC / 15th International VLSI Design Conference, 2002,
Bangalore
85.H.
C Srinivasaiah and N. Bhat "Statistical modelling of 0.1mm NMOS device characteristics for implant dose variations", 6th IEEE VLSI Design & Test
workshop-2002, Bangalore
86.K.
Maitra and N. Bhat,
"Poly-reoxidation Process Step for Suppressing Edge Direct Tunneling (EDT)
Through Ultrathin Gate Oxides in NMOSFETs", 6th IEEE VLSI Design & Test workshop-2002
87.P.
K Saxena and N. Bhat, "Single
Event Upset Response of a 0.09mm SRAM cell using 2D and 3D simulation", 6th IEEE VLSI Design & Test
workshop-2002, Bangalore
88.R.
Srinivasan, C Venkatesh and N. Bhat,
"Comparative study of Tuned amplifier performance with different inductor
configurations", 6th IEEE
VLSI Design & Test workshop-2002, Bangalore
89.A.
Gupta and N. Bhat, "Hardware
realisation of a digitally controllable neuron activation function and its
derivative for extremely low power applications", 6th IEEE VLSI Design & Test workshop-2002
90.N.
Bhat, “CMOS Technology Issues in Mixed Signal Design” Invited Tutorial, 6th IEEE VLSI Design & Test
workshop-2002, Bangalore
91.H.C.
Srinivasaiah and N. Bhat,
“Optimization of 0.1mm NMOS Transistor using Disposable Spacer Technique”, 5th IEEE VLSI Design and Test
Workshop, 2001
92.Simi
E., Sudheer S.S. and N. Bhat, “Dual Vt Technology using Dual
Thickness Gate Oxide”, 5th IEEE VLSI Design and Test
Workshop, 2001
93.H.
C. Srinivasaiah and N. Bhat,
"Simulation Study of Implant Dose Sensitivity of a 0.1 mm NMOSFET", 11th
International Workshop on "The Physics
of Semiconductors” 2001
94.N.
Bhat, “Circuit and Process Perspectives for the Transistor Design in the Deep
Sub-micron Technology”, Invited talk at
the National seminar on VLSI: Systems, Design and Technology, 2000
95.Chheda
S, Bhat N, Tsui P, Gonzales S, Cave N, Fu CC, Huang F, Nangia A, Choi PSJ,
Collins S, “Gate length and threshold voltage dependent non-linearity in the
hot carrier DC lifetime extrapolation for sub 100nm NMOS devices”, PROCEEDINGS
OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), vol. 3881,
pp.175-185, 1999
96.N. Bhat, P. Chen, P. Tsui, A. Das, M. Foisy, Y. Shiho, J.
Higman, J-Y Nguyen, S. Gonzales, S. Collins, D. Workman, “Hot carrier
reliability considerations in the integration of dual gate oxide transistor
process on a sub-0.25µm technology for embedded applications,” International Electron Device Meeting,
1998.
97.N. Bhat, H. Chuang, P. Tsui, R. Woodruff, J. Grant, R. Kruth,
A. H. Perera, S. Poon, S. Collins, D. Dyer, V. Misra, I. Yang, S. Venkatesan,
P. V. Gilbert, “Performance, standby power, and manufacturability trade-off in
transistor design consideration for 0.25-µm technology,” SPIE Microelectronics Device Technology conference, 1998
98.Venkatesan
S, Gelatos AV, Misra V, Smith B, Islam R, Cope J, Wilson B, Tuttle D, Cardwell
R, Anderson S, Angyal M, Bajaj R, Capasso C, Crabtree P, Das S, Farkas J,
Filipiak S, Fiordalice B, Freeman M, Gilbert PV, Herrick M, Jain A, Kawasaki H,
King C, Klein J, Lii T, Reid K, Saaranen T, Simpson C, Sparks T, Tsui P,
Venkatraman R, Watts D, Weitzman EJ, Woodruff R, Yang I, Bhat N, Hamilton G, Yu
Y, “A high performance 1.8V, 0.20 mm CMOS technology
with copper metallization”, pp. 769-772, INTERNATIONAL ELECTRON DEVICES MEETING
– 1997
99.Wang
AW, Bhat N, Saraswat KC, “TMCTS for gate dielectric in thin film transistors”,
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, vol. 424 pp. 281-286, 1997
100.
N. Bhat, A.
Wang and K.C. Saraswat, “Effect of annealing ambient on performance and
reliability of LPCVD oxides for TFTs,” Material
Research Society spring meeting,
1996
101.
N. Bhat,
M.Cao and K.C.Saraswat, “Bias temperature instability in hydrogenated
polysilicon thin film transistors,” Society
for Information Display conference ,
1995
102.
N. Bhat and
K.C.Saraswat, “Interface-state generation in deposited oxides due to bias
temperature stress,” Electrochemical
Society extended abstracts, 1994
103.
N. Bhat and
K.C.Saraswat, “Degradation of LPCVD oxides,” International Display Research conference, 1994
104.
H. Oi, Y. Shiho,
P. Chen, N. Bhat, “Dual Gate Oxide
Process Integration for High Performance Embedded Memory Products”, Solid
state Device Meeting, 1998
105.
T.C.Yang, N.Bhat, and K.C. Saraswat, “Effect of
interface stress on reliability of gate oxide,” 4th Symposium on Silicon nitride and silicon oxide thin insulating
films. 191st meeting of the ECS, May 1997
(invited paper).
106.
Yang TC, Bhat N,
Saraswat KC, “Dependence of reliability of ultrathin MOS gate oxides on the
Fermi level positions at gate and substrate”, MATERIALS RESEARCH SOCIETY
SYMPOSIUM PROCEEDINGS, pp.123-128, 1997
107.
V. Subramanian, N. Bhat, and K.C.Saraswat, “Accelerated
breakdown in thin oxide films due to interfacial stress and carrier depletion,”
Material Research Society spring meeting, 1996.